Both of these uses are made possible by the FET’s unique current–voltage characteristics. FETs can also be used as amplifiers for large amounts of current using a small voltage as a control signal. Like other FETs, HEMTs are used in integrated circuits as digital on-off switches. Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention due to their high-power performance.
A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). Band diagram of GaAs/AlGaAs heterojunction-based HEMT, at equilibrium.Ī high-electron-mobility transistor ( HEMT), also known as heterostructure FET ( HFET) or modulation-doped FET ( MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e.
0 kommentar(er)
